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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB686 DESCRIPTION With TO-3P(I) package Complement to type 2SD716 APPLICATIONS Power amplifier applications Recommend for 30~35W high-fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IE PT Tj Tstg PARAMETER Collector-base voltage IN Collector-emitter voltage Emitter-base voltage ANG CH EMIC ES Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE -100 -100 -5 -6 6 UNIT V V V A A W ae ae Collector current Emitter current Total power dissipation Junction temperature Storage temperature TC=25ae 60 150 -55~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-50mA ,IB=0 IE=-10mA ,IC=0 IC=-4A; IB=-0.4A IC=-4A ; VCE=-5V VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-1A ; VCE=-5V IE=0 ; VCB=-10V ;f=1MHz 55 10 MIN -100 -5 TYP. 2SB686 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE fT Cob MAX UNIT V V -2.0 -1.5 -10 -10 160 |I |I V V A A Collector output capacitance O 80-160 hFE Classifications R 55-110 HAN INC SEM GE OND IC TOR UC 270 MHz pF 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB686 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions(unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB686 SEM GE HAN INC OND IC TOR UC 4 |
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